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  <title>Nikita Sizykh — Experimental Physicist</title>
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  <header class="header">
    <h1>Nikita Sizykh</h1>
    <p class="subtitle">Experimental Physicist · Semiconductor &amp; Ferroelectric Devices</p>
    <p>Moscow, Russia · Open to relocation</p>
    <div class="links">
      <a href="mailto:sizykh.na@phystech.edu">sizykh.na@phystech.edu</a>
      <a href="https://orcid.org/0009-0000-0204-5104" rel="me">ORCID</a>
      <a href="https://github.com/labourorder">GitHub</a>
      <a href="https://linkedin.com/in/nikita-sizykh-303918160">LinkedIn</a>
      <a href="cv.pdf" download="Nikita-Sizykh-CV.pdf" type="application/pdf">Download CV (PDF)</a>
    </div>
    <nav class="section-nav" aria-label="Resume sections">
      <a href="#experience">Experience</a>
      <a href="#education">Education</a>
      <a href="#skills">Skills</a>
      <a href="#publications">Publications</a>
      <a href="#awards">Awards</a>
      <a href="#additional-experience">Additional experience</a>
    </nav>
  </header>

  <main>
    <section class="section" id="profile" aria-labelledby="profile-heading">
      <h2 id="profile-heading">Profile</h2>
      <p>
        Experimental physicist and microelectronics R&amp;D researcher with end-to-end experience in thin-film device
        fabrication, electrical characterization, synchrotron-based spectroscopy (HAXPES, DAFS), data analysis,
        and physics-based modeling. My research focuses on HfO₂–ZrO₂ ferroelectric devices, reliability,
        electrically active defects, and buried interfaces. I develop custom experimental setups,
        automated measurement workflows, and operando synchrotron experiments.
      </p>
    </section>

    <section class="section" id="experience" aria-labelledby="experience-heading">
      <h2 id="experience-heading">Research Experience</h2>
      <article class="item">
        <h3>Moscow Institute of Physics and Technology (MIPT)</h3>
        <p>Research Engineer <span class="date">(2020–2024)</span> → Junior Research Fellow <span class="date">(2024–present)</span></p>
        <p class="affiliation">Lab of Functional Materials and Devices for Nanoelectronics</p>

        <div class="project">
          <h4>Ferroelectric HZO devices for non-volatile memory</h4>
          <p class="date">2022–2026</p>
          <p>
            Developed and fabricated HZO-based devices and test structures on standalone chips and 4″ wafers,
            including refinement of fabrication processes. Investigated polarization switching, retention loss,
            endurance, leakage, dielectric breakdown, and multilevel operation; developed automated electrical
            measurement and data-processing workflows.
          </p>
        </div>
        <div class="project">
          <h4>Operando DAFS/NEXAFS of electrically biased devices</h4>
          <p class="date">2024–2025</p>
          <p>
            Developed and implemented the electrical part of operando synchrotron experiments and post-processing;
            participated in integration of the experimental setup at the synchrotron end-station.
          </p>
        </div>
        <div class="project">
          <h4>HAXPES metrology and standardization for synchrotron measurements</h4>
          <p class="date">2021–2022</p>
          <p>
            Contributed to the development of a certified measurement procedure for determining the electronic
            and chemical properties of functional thin-film structures using HAXPES, within a national program
            on measurement traceability at synchrotron-radiation facilities.
          </p>
        </div>
        <div class="project" id="sw-haxpes">
          <h4><a href="projects/sw-haxpes/">Buried metal/HZO interface characterization by NTR SW-HAXPES</a></h4>
          <p class="date">2021–2022</p>
          <p>
            Developed an analysis methodology combining NTR SW-HAXPES with X-ray reflectivity modeling
            to investigate the chemical and electronic structure of buried metal/HZO interfaces, refine
            the multilayer structure, and determine Schottky barrier heights.
          </p>
        </div>
      </article>

      <article class="item">
        <h3>JSC NIIGraphite</h3>
        <p>Research Engineer <span class="date">| 2019–2021</span></p>
        <p class="affiliation">Department of Advanced Development</p>
        <div class="project">
          <h4>Raman spectroscopy of SiC-based composite materials</h4>
          <p class="date">2019–2020</p>
          <p>
            Participated in the development of a Raman-spectroscopy-based methodology for assessing
            component distribution in silicon-carbide-based composite materials.
          </p>
        </div>
      </article>
    </section>

    <section class="section" id="education" aria-labelledby="education-heading">
      <h2 id="education-heading">Education</h2>
      <div class="item">
        <h3>PhD Candidate, Condensed Matter Physics</h3>
        <p>Moscow Institute of Physics and Technology <span class="date">| 2022–2026</span></p>
        <p>Thesis defense scheduled for December 2026.</p>
        <p>Thesis: “Study of Interfaces in Ferroelectric Hafnium–Zirconium Oxide-Based Capacitor Structures for Memory and Neuromorphic Applications”</p>
      </div>
      <div class="item">
        <h3>MSc, Applied Mathematics and Physics</h3>
        <p>Moscow Institute of Physics and Technology <span class="date">| 2020–2022</span></p>
        <p>Thesis: “Investigation of the Chemical and Electronic Properties of the Buried HZO/W Interface Utilizing NTR SW-HAXPES”</p>
      </div>
      <div class="item">
        <h3>BSc, Nanoengineering</h3>
        <p>Bauman Moscow State Technical University <span class="date">| 2016–2020</span></p>
      </div>
    </section>

    <section class="section" id="skills" aria-labelledby="skills-heading">
      <h2 id="skills-heading">Skills</h2>
      <div class="item">
        <h3>Device fabrication &amp; processing</h3>
        <p>
          MIM, MFM, MFMIS, and MOS structures; magnetron sputtering; e-beam evaporation;
          optical lithography with positive and negative photoresists; wet and dry etching.
        </p>
      </div>
      <div class="item">
        <h3>Electrical characterization &amp; reliability</h3>
        <p>
          Probe stations equipped with a semiconductor device parameter analyzer; custom test benches using
          SMUs, WGFMUs, AWGs, and OSCs; I–V and C–V characterization; ferroelectric switching, retention,
          endurance, electrical stress, and dielectric breakdown; experiment automation.
        </p>
      </div>
      <div class="item">
        <h3>Materials characterization</h3>
        <p>
          XPS; NTR SW-HAXPES; XRD; X-ray reflectivity; operando DAFS; SEM;
          FIB cross-sectional lamella preparation for TEM and Slice-and-View.
        </p>
      </div>
      <div class="item">
        <h3>Scientific computing, automation &amp; engineering tools</h3>
        <p>
          Python; MATLAB; C/C++ (Arduino); instrument control (VISA); scientific data processing;
          physics-based modeling; Git; KLayout; Altium Designer; Autodesk Eagle; Autodesk Fusion 360.
        </p>
      </div>
      <div class="item">
        <h3>Languages &amp; scientific communication</h3>
        <p>
          Russian — native; English — B2; manuscript preparation and internal review;
          preparation of responses to reviewers; conference presentations.
        </p>
      </div>
    </section>

    <section class="section" id="publications" aria-labelledby="publications-heading">
      <h2 id="publications-heading">Publications</h2>
      <ul class="publications">
        <li>
          <strong>Sizykh, N.A.</strong>, Spiridonov, M., Khanas, A. and Zenkevich, A.V., 2026.
          Interface defects as the origin of breakdown in ferroelectric TiN/HZO/TiN memory capacitors subjected to electrical stress.
          <em>Applied Physics Letters</em>, 128, 252903.
          <a class="doi" href="https://doi.org/10.1063/5.0336988">DOI: 10.1063/5.0336988</a>
        </li>
        <li>
          Kuzmichev, D.S., Konstantinov, V.S., <strong>Sizykh, N.A.</strong> and Khakimov, R.R., 2026.
          How to make opposite state store again.
          <em>Nanosystems: Physics, Chemistry, Mathematics</em>, 17(2), pp. 187–192.
          <a class="doi" href="https://doi.org/10.17586/2220-8054-2026-17-2-187-192">DOI: 10.17586/2220-8054-2026-17-2-187-192</a>
        </li>
        <li>
          <strong>Sizykh, N.A.</strong>, Spiridonov, M., Khanas, A. and Zenkevich, A.V., 2025.
          Realization of Deterministic Multilevel Polarization States in Ferroelectric Hf₀.₅Zr₀.₅O₂-Based Capacitors.
          <em>Russian Microelectronics</em>, 54(8), pp. 886–891.
          <a class="doi" href="https://doi.org/10.1134/S1063739725601808">DOI: 10.1134/S1063739725601808</a>
        </li>
        <li>
          Matchenya, I., Khanas, A., Podgornyi, R., Shirkin, D., Ekgardt, A., <strong>Sizykh, N.A.</strong>, et al., 2025.
          Short-Term Bienenstock-Cooper-Munro Learning in Optoelectrically-Driven Flexible Halide Perovskite Single Crystal Memristors.
          <em>Small Methods</em>, 9(9), e00203.
          <a class="doi" href="https://doi.org/10.1002/smtd.202500203">DOI: 10.1002/smtd.202500203</a>
        </li>
        <li>
          Chernikova, A.G., <strong>Sizykh, N.A.</strong>, Zabrosaev, I.V. and Markeev, A.M., 2025.
          TiN/HZO/TiN ferroelectric capacitors with TiO₂ insets: Critical difference between top and bottom interface modification.
          <em>Surfaces and Interfaces</em>, 62, 106135.
          <a class="doi" href="https://doi.org/10.1016/j.surfin.2025.106135">DOI: 10.1016/j.surfin.2025.106135</a>
        </li>
        <li>
          Chouprik, A., Savelyeva, E., Korostylev, E., Kondratyuk, E., Zarubin, S., <strong>Sizykh, N.A.</strong>, et al., 2023.
          Effect of Domain Structure and Dielectric Interlayer on Switching Speed of Ferroelectric Hf₀.₅Zr₀.₅O₂ Film.
          <em>Nanomaterials</em>, 13(23), 3063.
          <a class="doi" href="https://doi.org/10.3390/nano13233063">DOI: 10.3390/nano13233063</a>
        </li>
        <li>
          Zhuk, M.Yu., <strong>Sizykh, N.A.</strong>, Kuzmichev, D.S., Chouprik, A.A., Zarubin, S.S., Gornev, E.S. and Zenkevich, A.V., 2022.
          Effect of Electrode Nanopatterning on the Functional Properties of Ta/TaOₓ/Pt Resistive Memory Devices.
          <em>ACS Applied Nano Materials</em>, 5(6), pp. 8594–8601.
          <a class="doi" href="https://doi.org/10.1021/acsanm.2c02076">DOI: 10.1021/acsanm.2c02076</a>
        </li>
      </ul>
    </section>

    <section class="section" id="awards" aria-labelledby="awards-heading">
      <h2 id="awards-heading">Awards</h2>
      <div class="item">
        <h3>Best Oral Presentation</h3>
        <p>Synchrotron Radiation Techniques for Catalysts and Functional Materials · Tomsk <span class="date">| 2024</span></p>
        <p>“Application of hard X-ray photoelectron spectroscopy in near total reflection regime for the study of nanoelectronic devices”</p>
      </div>
      <div class="item">
        <h3>ROSATOM Award · “Innovative Scientific Leader in Nuclear Field”</h3>
        <p class="date">2020</p>
      </div>
    </section>

    <section class="section" id="additional-experience" aria-labelledby="additional-experience-heading">
      <h2 id="additional-experience-heading">Additional Experience</h2>
      <div class="item">
        <h3>Web Dashboard for Users of MIPT Center of Shared Research Facilities</h3>
        <p class="date">2024–2026</p>
        <p>Designed the dashboard architecture and maintained the service on a daily basis.</p>
      </div>
      <div class="item">
        <h3>FIB–SEM characterization of reservoir rock cores</h3>
        <p class="date">2022–2023</p>
        <p>
          Prepared cross-sections of reservoir rock core samples using focused ion beam (FIB) milling;
          generated SEM image stacks for 3D reconstruction of pore-space morphology and fluid flow simulations.
        </p>
      </div>
      <div class="item">
        <h3>Physics tutor</h3>
        <p class="date">2019–2022</p>
        <p>Tutored high-school and university students in physics and prepared them for examinations.</p>
      </div>
    </section>
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